Overview
Date: February 20, 2019
Time: 1:00 p.m.-5:00 p.m. EDT
Cost: $200
This Webinar will begin with a brief introduction to the motivation for area-selective deposition (ASD), then describe basic concepts and processes in thin film formation, including an overview of reactions, energetics and mechanisms in film deposition and
nucleation. Using reports from the literature, we will review current approaches and capabilities for ASD, and finish with discussion of prospects and challenges that need to be overcome in this field.
nucleation. Using reports from the literature, we will review current approaches and capabilities for ASD, and finish with discussion of prospects and challenges that need to be overcome in this field.
Who Should Attend
This webinar will be geared to researchers, technologists, and students interested in concepts in surface reactions for atomic-scale thin film processing. Some previous exposure or knowledge of ALD reaction and processes will be helpful, but not necessary for this course.
Other AVS Events
April 4-5, 2019, Leuven, Belgium
July 21-24, 2019, Bellevue, Washington
October 20-25, 2019, Columbus, Ohio
Call for Abstracts Deadline: May 1, 2019
Presenter
Gregory N. Parsons
Professor, North Carolina State University
Syllabus
I. Introduction to Area Selective Deposition (ASD)
A. Opportunities and needs in thin film deposition
A. Opportunities and needs in thin film deposition
B. Overview of Physical Vapor Deposition (PVD), Chemical Vapor
Deposition (CVD), Atomic Layer Deposition (ALD)
Deposition (CVD), Atomic Layer Deposition (ALD)
C. Conditions that influence deposition
D. Types of selective deposition
II. Nucleation Mechanisms during CVD and ALD
A. Nucleation energetics and kinetics
B. Nuclei evolution – sintering, Ostwald ripening,
C. Nucleation at low temperature vs high temperature
D. Types of selective deposition
II. Nucleation Mechanisms during CVD and ALD
A. Nucleation energetics and kinetics
B. Nuclei evolution – sintering, Ostwald ripening,
C. Nucleation at low temperature vs high temperature
III. Area Selective CVD
A. Applications for area selective CVD
B. Substrate selective Si and GaAs epitaxy
C. Area selective metal CVD
IV. Motivation and Approaches for ASD
A. ASD in microelectronics
B. ASD in catalysis
C. ASD in other applications
D. Approaches to ASD
E. Two-step and Three-step AS-ALD
F. Mechanisms for selectivity loss in ASD
V. Models for Nucleation and ASD
A. First-principles modeling
B. Empirical models for nucleation and island growth
C. Quantitative description of selectivity
D. Analytical model for nucleation rate and selectivity evolution
A. First-principles modeling
B. Empirical models for nucleation and island growth
C. Quantitative description of selectivity
D. Analytical model for nucleation rate and selectivity evolution
VI. ASD Materials and Processes
A. ASD of Metal on Metal
B. ASD of Metal on Dielectric
C. ASD of Dielectric on Metal
D. ASD of Dielectric on Dielectric
E. ASD of Organics, hybrid materials and metal-organic frameworks (MOFs)
A. ASD of Metal on Metal
B. ASD of Metal on Dielectric
C. ASD of Dielectric on Metal
D. ASD of Dielectric on Dielectric
E. ASD of Organics, hybrid materials and metal-organic frameworks (MOFs)
VII. Summary and Future Challenges