Date: June 13, 2018
Time: 1:00 p.m.-5:00 p.m. EDT
Cost: $200
This AVS Webinar on Atomic Layer Etching (ALE) provides the training required to understand plasma-assisted ALE and thermal ALE.  The webinar will explain the process strategies for plasma-assisted ALE and thermal ALE.  Important ALE approaches for many materials including Si, SiO2, Al2O3, TiN and W will be described that are useful for advanced semiconductor processing.

Who Should Attend

Scientists, engineers and technicians who use or plan to use atomic layer etching for atomic scale fabrication.

Other AVS Events

July 29-August 1, 2018, Incheon, South Korea
October 21-26, 2018, Long Beach, California



1.  Introduction to Atomic Layer Etching (ALE)
A.  Need for ALE for atomic layer processing
B.  ALE as reverse of atomic layer deposition (ALD)
C.  History of ALE using self-limiting surface reactions
D.  Plasma-assisted ALE using energetic ions
E.  Thermal ALE using gas precursors
F.  Selective ALE
2.  Basics of Plasma-assisted ALE
A.  Sequential steps of surface modification and removal
B.  Surface modification by halide adsorption
C.  Removal of surface halide species by ion impact
D.  Directional anisotropic etching
E.  Synergy
F.  Self-limiting reactions displaying “saturation”
G.  Selective etching using ion energy
3.  Example of Plasma-assisted ALE:  Si ALE
A.  Surface modification by chlorine adsorption 
B.  Thermal or plasma chlorination
C.  Removal of silicon chloride species using Ar+ bombardment
D.  Details of Ar+ ion collision
E.  Synergy in Si ALE
F.  Si ALE experimental results
G.  Selectivity of Si ALE relative to SiO2 ALE